Contact Person
Prof. Michel Krakowski
Short organisation description
Alcatel Thales III-V Lab is a private R&D organisation jointly established by Alcatel-Lucent and Thales on 1st July 2004, under the French Economic Interest Group (GIE) status. Relying on the teams and equipment coming from “Alcatel CIT Research and Innovation” on one hand, and from Thales Research and Technology on the other hand, it concentrates in a single entity the most advanced industrial research skills in the field of III-V semiconductors in Europe. Its staff amounts to approximately 100 people, most of them being highly qualified recognised experts. The purpose of Alcatel Thales III-V Lab is to perform research and development on components, from basic research to development, taking advantage of the synergies between the technologies developed for various markets addressed by Thales and Alcatel-Lucent, such as telecom, space, defence and security. The streamlining of the research work performed within the Group, allows to strengthen the efforts above the critical mass and to increase the added value through the existing synergies. Alcatel Thales III-V Lab has also the capacity to produce and sell components (epitaxial wafers, processed wafers, modules) in small quantities (typically a few tens of wafers); this is one of its main business development axis. Such capacity is particularly adapted to address in a flexible way the rapid evolution of the market, allowing partner companies (modules or systems manufacturers, including of course the mother companies Alcatel-Lucent and Thales) to have an early access to the components; in a second step, depending on the market evolution, if larger quantities are required, the technology will be transferred to a partner company with larger production capacities. The main research topics within III-V Lab are:

  • Optical sources and detectors for telecom 10-40Gb/s and above,
  • Micro/nano-electronics circuits for telecom 40Gb/s and above (analogue and digital),
  • High rate optical links,
  • High brightness semiconductor lasers,
  • Single frequency laser diodes for atomic clocks and gaz detection,
  • Quantum cascade semiconductor lasers,
  • High speed analogue optoelectronic components and functions for microwave photonics,
  • Microwave components based on GaN (high power, high efficiency, wide band),
  • High resolution infrared imaging sensors.
> The facilities of Alcatel Thales III-V Lab, located in Marcoussis and Palaiseau, include 4000 m2 of clean rooms, advanced material synthesis (MOCVD, MBE), standard and advanced device processing (vacuum deposition, photolithography, RIE, ICP, CAIBE, IBE), measurement and characterization facilities (photoluminescence mapping & topography; simple & HR X-ray diffraction; electrochemical profiling; optical microscopy, SIMS, Auger, TEM, AFM, probe testing, L(I) and V(I) measurements, far field pattern measurements, near field and optical spectra versus current and temperature, life test equipments, scattering parameters up to 60GHz, relative intensity noise up to 20GHz, linearity, eye diagram up to 40Gb/s and bit error rate equipments) and more).

Alcatel Thales III-V Lab has participated in or led numerous research programs - both domestic or EUfunded, in the framework of ACTS, TELEMATICS, ESPRIT, BRITE-EURAM, TIDE, TMR, IST and NMP programmes: ESPRIT 263, RACE 1029, RACE 1033 OSCAR, RACE 1057 AQUA, NODELASE (BE- 1945), ESPRIT 22497 NANOLASE, ACTS n° 30176 OSC, 2001 WTDM, 2005 MODAL, 2006 WELCOME, ACTS 053 MIDAS and 083 FRANS, IST-1999-10356 ULTRABRIGHT, IST BIGBAND, IST WWWBRIGHTEU, IST WWWBRIGHTEREU, IST NANO-UB, IST IP ZODIAC