Papers

26. High Speed Low Noise InAs/InAlGaAs/InP 1.55 µm Quantum Dot Lasers
D. Gready, G. Eisenstein, C. Gilfert, V. Ivanov, J.P. Reithmaier
Photonics Technology Letters 24, 809 (2012)

25. Influence of electronic coupling on the radiative lifetime in the (In,Ga)As/GaAs quantum dot–quantum well system
M. Syperek, J. Andrzejewski, W. Rudno-Rudziński, G. Sźk, J. Misiewicz, E. M. Pavelescu, C. Gilfert, J. P. Reithmaier
Physical Review B 85, 125311 (2012)

24. Height-driven linear polarization of the surface emission from quantum dashes
A. Musia³, P. Podemski, G. Sźk, P. Kaczmarkiewicz, J. Andrzejewski, P. Machnikowski, J. Misiewicz, S. Hein, A. Somers, S. Höfling, J. P. Reithmaier, A. Forchel
Semiconductor Science and Technology 27, 105022 (2012)

23. Influence of non-radiative recombination on photoluminescence decay time in GaInNAs quantum wells with Ga- and In-rich environments of nitrogen atoms
R. Kudrawiec, M. Syperek, M. Latkowska, J. Misiewicz, V.-M. Korpijärvi, P. Laukkanen, J. Pakarinen, M. Dumitrescu, M. Guina, M. Pessa
Journal of Applied Physics 111, 063514 (2012)

22. Modified rate equation model including the photon-photon resonance
A. Laakso, M. Dumitrescu
Optical and Quantum Electronics 42, 785 (2010)

21. The effect of facet reflections in index-coupled distributed feedback lasers with coated facets
A. Laakso, J. Karinen, J. Telkkälä, M. Dumitrescu
Optical and Quantum Electronics 42, 713 (2010)

20. Enhanced Modulation Bandwidth in Complex Cavity Injection Grating Lasers
M.Vallone, P.Bardella, I.Montrosset
IEEE Jurnal of Quantum Electronics 47, 1269 (2011)

19. Time-Domain Traveling Wave Model of Quantum Dot DFB Lasers
M. Gioannini, M. Rossetti
IEEE Journal of Selected Topics in Quantum Electronics 17, 1 (2011)

18. High gain 1.55 µm diode lasers based on InAs quantum dot like active regions
C. Gilfert, V. Ivanov; N. Oehl, M. Yacob, J.P. Reithmaier
Applied Physics Letters 98, 201102 (2011)

17. Ultrafast Cross saturation Dynamics in Inhomogeneously Broadened InAs/InP Quantum Dash Optical Amplifiers
A. Capua, G. Eisenstein, J.P. Reithmaier
Applied Physics Letters 98, 101108 (2011)

16. 1.3 µm two-section DBR lasers based on surface defined gratings for high speed telecommunication
S. Afzal, F. Schnabel, W. Scholz, J.P. Reithmaier, D. Gready, G. Eisenstein, P. Melanen, V. Vilokkine
Photonics Technology Letters 23, 411 (2011)

15. Effects of Homogeneous and Inhomogeneous Broadening on the Dynamics of Tunneling Injection Quantum Dot Lasers
D. Gready, G. Eisenstein
IEEE Journal of Quantum Electronics 47, 944 (2011)

14. A nearly instantaneous gain response in quantum dash based optical amplifiers
A. Capua, G. Eisenstein, J.P. Reithmaier
Applied Physics Letters 97, 131108 (2010)

13. Nanoimprint Lithography - Next Generation Nanopattering Methods for Nanophotonics Fabrication
J. Viheriälä
Recent Optical and Photonic Technologies, Chapter 14, ISBN: 978-953-7619-71-8, pp 275-298 (2010)

12. Effects of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 µm GaInAsN/GaAs quantum well structures
V. Polojärvi, J. Salmi, A. Schramm, A. Tukiainen, M. Guina, J. Pakarinen, E. Arola, J. Lång, I. J. Väyrynen, P. Laukkanen
Applied Physics Letters 97, 111109 (2010)

11. Carrier Dynamics in Tunneling Injection Quantum Dot Lasers
D. Gready, G. Eisenstein
IEEE Journal of Quantum Electronics 46, 1611 (2010)

10. Contactless electroreflectance study of the band bending in Be doped GaIn(N)As/GaAs quantum wells: The origin of the Be-doping related photoluminescence enhancement
R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, V.-M. Korpijärvi, J. Pakarinen, J. Puustinen, P. Laukkanen, A. Laakso, M. Guina, M. Dumitrescu, and M. Pessa
Applied Physics Letters 97, 021902 (2010)

9. Influence of the As2/As4 growth modes on the formation of quantum dot like InAs islands grown on InAlGaAs/InP (100)
C. Gilfert, E.-M. Pavelescu, and J. P. Reithmaier
Applied Physics Letters 96, 191903 (2010)

8. Time-resolved photoluminescence spectroscopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure
M. Syperek, P. Leszczyński, J. Misiewicz, E. M. Pavelescu, C. Gilfert, J.P. Reithmaier
Applied Physics Letters 96, 011901 (2010)

7. The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells
R. Kudrawiec, V.-M. Korpijärvi, P. Poloczek, J. Misiewicz, P. Laukkanen, J. Pakarinen, M. Dumitrescu, M. Guina, and M. Pessa
Applied Physics Letters 95, 261909 (2009)

6. Optical methods used to optimise semiconductor laser structures with tunnel injection from quantum well to InGaAs/GaAs quantum dots
W. Rudno-Rudziński, K. Ryczko, G. Sźk, M. Syperek, J. Misiewicz, E. M. Pavelescu, C. Gilfert, J. P. Reithmaier
Optica Applicata, 39, 923 (2009)

5. Soft Stamp UV-Nanoimprint Lithography for Fabrication of Laser Diodes
J. Viheriälä, M-R. Viljanen, J. Kontio, T. Leinonen, J. Tommila, M. Dumitrescu, T. Niemi, M. Pessa
J. of Micro/Nanolitography, MEMS, and MOEMS, vol. 8, 033004 (2009)

4. Laterally-corrugated ridge-waveguide distributed feedback lasers at 980 nm
A.Laakso, M.Dumitrescu, J. Viheriälä, J.Telkkälä, J.Tommila, K.Haring, T.Leinonen, S.Ranta, M.Pessa
Opt Quantum Electron. 41, 11-16 (2009)

3. Optical modeling of laterally-corrugated ridge-waveguide gratings
A. Laakso, M. Dumitrescu, J. Viheriälä, J.Karinen, M. Suominen, M. Pessa, Opt Quant Electron, (2009)

2. Optimization studies of single-transverse-mode 980 nm ridge-waveguide lasers
A. Laakso, M. Dumitrescu, P.Pietilä, M. Suominen, M. Pessa, Opt Quant Electron., DOI 10.1007/s11082-009-9280, (2009)

1. Applications of UV-nanoimprint soft stamps in fabrication of single-frequency diode lasers
J. Viheriälä, J.Tommila, T. Leinonen, M. Dumitrescu, L. Toikkanen, T. Niemi, M. Pessa, Microelectron. Eng. 86, 321-324 (2009)